MEMRISYS 2025 Programme

Day 1 – Monday 13th October

08:00 – 09:00	Registration and Coffee Strathblane Hall
09:00 – 10:00	PLENARY LECTURE: Memristor, Hodgkin-Huxley, and Edge of Chaos: Quo Vadis? Leon Chua – University of California, Berkeley Pentland Suite
10:00 – 10:20	Break
	Materials and Methods for Unconventional Computing Sidlaw Suite	Systems I Fintry Suite
10:20 – 10:45	Oxide-based RRAMs for unconventional computing Sabina Spiga – CNR - IMM, Unit of Agrate Brianza	Advanced memristor technologies in neuromorphic and in-memory computing Daniele Ielmini – Politecnico di Milano
10:45 – 11:00	Multiple nano-filaments confinement for analogue switching in hexagonal Boron nitride memristors Jaesub Song – Pohang University of Science and Technology	Harnessing long-short dynamics in fully hardware memristive spiking neural networks for neural signal processing Peng Lin – Zhejiang University
11:00 – 11:15	Wafer-scale floating-gate memristor array using 2D-graphene/3D-Al₂O₃/ZnO heterostructures for neuromorphic system Mihyang Park – Sungkyunkwan University	Threshold switching memristor-based spiking neuron circuit design for motion tracking Pengyu Liu – The Chinese University of Hong Kong
11:15 – 11:30	2D Heterostructures for Resistive Switching Applications Maria Grácio – Universidade do Porto	Ultra-Flexible memristive reservoir array for on-skin computing Hyojin Shin – Korea University
11:30 – 11:45	Polyoxovanadates on MoS₂ TDMC layers as novel multi-level switching materials Marco Moors – Leibniz Institute of Surface Engineering	Recognition of the Parkinson's disease with a mycelium-based reservoir memristive circuit Georgios Sirakoulis – Democritus University of Thrace
11:45 – 12:00	Optical operando insights on the dynamics of memristors Atif Jan – University of Cambridge	CMOS/Memristor hybrid circuit for sensing and bio-signal processing Shiwei Wang – University of Edinburgh
12:00 – 13:00	Lunch Lomond Suite
13:00 – 14:00	Poster Session I Lomond Suite
	Theory & Design Sidlaw Suite	Devices I Fintry Suite
14:00 – 14:25	Analog computing through memristive dynamic arrays: Sensor processor structures Ronald Tetzlaff – Technische Universität Dresden	Compact and capable neuromorphics through drift–diffusive memristor integration Joshua Yang – University of Southern California
14:25 – 14:40	Neural network-based modeling of a memristor embedded in a physical chaotic circuit Karol Bednarz – AGH University of Krakow	Comparing filamentary SiOₓ ReRAM switching characteristics under different programming parameters Paulius Abraitis – University College London
14:40 – 14:55	Neural sequence models to memristor state variable modelling and prediction Rishabh Mallik – Forschungszentrum Jülich GmbH	Integrate-and-Fire circuits based on Ag/HfO₂/Pt threshold switches Susanne Hoffmann-Eifert – Forschungszentrum Jülich GmbH
14:55 – 15:10	Memristive oscillator at the edge of chaos enables controllable complex behaviors and frequency domain extraction Yanghao Wang – Peking University	TiOₓ RRAM 1T1R with optimized IGZO TFT selector Alin Panca – University of Edinburgh
15:10 – 15:25	NDR effects in a niobium oxide threshold switch induce complex small-signal current amplification phenomena in an otherwise-dumb analogue electrical cell Alon Ascoli – Politecnico di Torino	Metallic-liner assisted 3D vertical PRAM architecture with effective drift suppression and reliable multi-level operation for analog compute-in-memory Youngsoo Choi – Seoul National University
15:25 – 15:40	Break
	Computing Architectures I Sidlaw Suite	Materials I Fintry Suite
15:40 – 16:05	Outlook on PCM-based analog in-memory computing: Embedded neural processors and emerging device concepts Abu Sebastian – IBM Zurich	Filament conductivity change mechanism – new type memristive switching and its applications Ilia Valov – Forschungzentrum Jülich GmbH
16:05 – 16:20	Digital-analog hybrid-mode amorphous GaOₓ memristor for unified edge memory and forming-free computing system Zhuo Diao – University of Osaka	A compact model for volatile switching electrochemical metallization memory cells Stephan Menzel – Forschungszentrum Jülich GmbH
16:20 – 16:35	Impact of fabrication errors on FPGA logic and interconnect structures using memristor-based memory cells Jonas Gehrunger – Technische Universität Darmstadt	Studies of TiOₓ memristive device dynamics: Quantum conductance and capacitive Effects Itir Koymen – TOBB University of Economics and Technology
16:35 – 16:50	Reservoir reconfiguration in self-organized neuromorphic networks: a multidisciplinary approach for task-oriented information processing Davide Pilati – Politecnico di Torino	Understanding the transient dynamics Ag-based electrochemical memristors Stefano Brivio – CNR - IMM, Unit of Agrate Brianza
16:50 – 17:05	Analog in-memory distance computing for adaptive representation learning and efficient in-memory search using In-Ga-Zn-O thin film transistors Kanghyeon Byun – Seoul National University	Advances in silicon nitride ReRAM technology Panagiotis Dimitrakis – NCSR Demokritos
17:05 – 17:20	Numerical differentiation on-chip learning for analogue memristor computing Tianyang Yao – University College London
17:20 – 19:00	Drinks Reception Strathblane Hall

Poster Session I

1	Polymeric memristors based on n-alkyl dithienopyrrole functionalized with carbazole side groups Marek Jurca – Univerzita Tomáše Bati ve Zlíně
3	GCMO-based memristors for autonomous robots Anni Antola – University of Turku
7	Dynamic memdiode model for resistive switching devices: Simplified SPICE script for rapid simulation and data representation Enrique Miranda – Universitat Autonoma de Barcelona
8	Granular memristors with tuneable stochasticity Uddipan Ghosh – Indian Institute of Science
10	High-efficiency yttrium-doped molybdenum oxide artificial synapses for neuromorphic computing and cognitive image processing Vaishnavi M Rajesh – Indian Institute of Space Science and Technology Trivandrum
13	Volatile and non-volatile memristors based on GeO₂ nanoparticles and PMMA nanocomposite Ayoub H. Jaafar – University of Nottingham
16	Analysis of the dynamic behavior of memristors by recording current transients Salvador Dueñas – Universidad de Valladolid
20	Mott transition-driven negative differential resistance for dual spiking modes in VOₓ memristor Zih-Siao Liao – National Cheng Kung University
21	AI-accelerated modeling of switching and gate control in 2D memristive devices Benjamin Spetzler – Kiel University
22	Effect of Au doping on the ReRAM device with HfOₓ switching layer for artificial synapse application Shoso Shingubara – Kansai University
25	Memristive oscillation emerging from hidden inductance in molecular memristors Yugo Oshima – RIKEN
26	WOₓ interlayer-enabled polarization enhancement in HfZrO₂ for cryogenic FeCAP and FeFET Eunjin Kim – Kyungpook National University
27	Thin-film growth strategy for solving the sustainability puzzle of neuromorphic-based artificial intelligence (AI) hardware Babak Bakhit – University of Cambridge
40	Electrodeposited prussian blue memristors for non-volatile memory and neuromorphic computing Lindiomar Borges de Avila Junior – Université Catholique de Louvain
41	Impact of dielectric thickness on Pt/Ag/HfO₂/W/Ti memristors María Helena Castán Lanaspa – Universidad de Valladolid
44	Programming arbitrary analog conductance states of memristors in one step Shiqing Wang – Peking University
46	Self-oscillating single-crystal Mott memristive devices based on one-dimensional halogen-bridged Nickel complexes Tetsuro Moriya – Nagoya University
47	Gd0.2Ca0.8MnO3-based volatile resistive switching solutions for leaky integrate operations Ilari Angervo – University of Turku
55	Low-temperature deposition of metal chalcogenides memristors via single-source precursors for neuromorphic applications Ruomeng Huang – University of Southampton
57	Tuneable memristive behavior in a one-dimensional molecular Mott insulator: Directional Joule suppression and thermal hysteresis control Taishi Takenobu – University of Nagoya
63	Distinct low-frequency noise fingerprints of filamentary and interfacial switching in La2NiO4+δ-based RRAM Yingxin Li – Technische Universität Darmstadt
66	Identifying the electronic and ionic transport in area-dependent VCM Clemens Wittberg – Forschungszentrum Jülich
69	Defect engineering with lanthanum in HfO₂ memristors for stable resistive switching Taewook Kim – Technische Universität Darmstadt
78	Tunable synaptic characteristics of the Ru/CeO₂/Pt memristor for neuromorphic computing system Hanju Ko – Ulsan National Institute of Science and Technology

Day 2 – Tuesday 14th October

08:45 – 09:45	PLENARY LECTURE: The connections among Edge of Chaos, excitability and thermodynamic efficiency in memristors Stanley Williams – Texas A&M University Pentland Suite
09:45 – 10:05	Break
	Devices II Sidlaw Suite	Neuromorphic Computing I Fintry Suite
10:05 – 10:30	Ovonic threshold switching memristor: Characterisation and emerging memory and computing applications Wei Zhang – Liverpool John Moores University	In-memory computing with memristor-based circuits and architectures John Paul Strachan – RWTH Aachen
10:30 – 10:45	On the interplay of T and R in VCM-based 1T1R structures Stefan Wiefels – Forschungszentrum Jülich	CMOS-Memristive Dendrite Architecture for Reliable Temporal Pattern Recognition Ming-Jay Yang – Forschungszentrum Jülich GmbH
10:45 – 11:00	CMOS integration of area-dependent Pr0.7Ca0.3MnO3-based ReRAM devices Zoe Moos – Forschungszentrum Jülich GmbH	Highly integrated vertical floating gate memristor for efficient two-terminal neuromorphic systems So Hyeon Park – Sungkyunkwan University
11:00 – 11:15	A scaling-friendly memristor-based leaky integrate-and-fire circuit in a TSMC 28 nm process technology Lukas Krystofiak – Forschungzentrum Jülich GmbH	A trainable memristive circuit integrating bio-inspired learning rules Nadia Jimenez – ETH Zurich
11:15 – 11:30	BEOL integration of TiO₂₋ₓ memristors for neuromorphic applications Davide Florini – Université de Sherbrooke	IGZO TFT-based 3N0C synaptic memory for scalable and efficient analog process-in-memory Junyoung Choi – Pohang University of Science and Technology
11:30 – 11:45	Memristor integration on gate-site transistors for SNN emulation Cuo Wu – Technische Universität Dresden	Nonlinear memristor-aware training for energy-efficient neural computing Younghyun Lee – Korea Institute of Science and Technology (KIST)
11:45 – 12:15	Break
	Computing Architectures II Sidlaw Suite	Materials II Fintry Suite
12:15 – 12:40	High-Order Hopfield neural networks and Boltzmann machines for combinatorial optimization Dmitri Strukov – UC Santa Barbara	Synaptic and neural behaviours in a standard silicon transistor Mario Lanza – National University of Singapore
12:40 – 12:55	Solving linear programming in one step with RRAM-based analog matrix computing Yubiao Luo – Peking University	Insights into memristive switching dynamics in Ti/HfO₂-based complementary resistive switching devices Cristian Ferreyra – Institut de Microelectrònica de Barcelona, IMB-CNM (CSIC)
12:55 – 13:10	Memristor-cellular nonlinear networks exploiting variability for physical unclonable functions Dimitrios Prousalis – Technische Universität Dresden	Cryogenic characterization of Schottky-barrier field effect transistors for hybrid transistor-memristor devices Yannik Saßor – Technische Universität Dortmund
13:10 – 13:25	IMBC: RRAM-based In-Memory Bitstream Computing for a Next generation of AI Hardware Shady Agwa – University of Edinburgh	Material property prediction for resistive switching layer using machine learning and chemically-relevant feature descriptors Ben Rowlinson – University of Edinburgh
13:25 – 13:40	The gen-II adiabatic capacitive neuron - an elegant mapping from abstract networks to silicon Alex Serb – University of Edinburgh	Low-Frequency noise spectroscopy as a tool to evaluate oxide-based memristive switching mechanisms Demian Ranftl – Goethe-University Frankfurt
13:40 – 14:20	Lunch Lomond Suite
14:20 – 15:30	Poster Session II and Live Demos Lomond Suite
	Neuromorphic Computing II Sidlaw Suite	Magnetics & Spintronics Fintry Suite
15:30 – 15:55	Memristor-enabled modern analog computing Zhong Sun – Peking University	Frequency synapses in spintronic neural networks Julie Grollier – CNRS/THALES
15:55 – 16:10	Demonstration of a variation tolerant memristive majority logic for in-memory parallel computing Moon Gu Choi – Korea Advanced Institute of Science and Technology (KAIST)	Edge-of-chaos state realized in spin-wave interference-based reservoir computing Maki Nishimura – National Institute of Materials Science (NIMS)
16:10 – 16:25	Evolution-enabled neuromorphic computing with memristors Zilu Wang – Harbin Institute of Technology (Shenzhen)	Spintronic advantage of molecular spin-valves for neuromorphic computing Caterina Baldassini – ISMN CNR
16:25 – 16:40	Temperature-sensitive spiking neurons implemented with microfabricated vanadium dioxide memristors Léopold Van Brandt – Université Catholique de Louvain	Spoken digit recognition using in-materio reservoir computing utilizing non-linear interfered spin wave multi-detection Sota Hikasa – Tokyo University of Science
16:40 – 16:55	Efficient and multi-timescale neuromorphic information processing achieved by ion-gating modulation of material dynamics Daiki Nishioka – NIMS	HZO/Ga₂O₃ ferroelectric tunnel junction synaptic devices Mrinmoy Dutta – Helmholtz Zentrum Berlin for Material and Energy

Poster Session II

76	Characterisation and data-driven modelling of memimpedance Guoyang Huang – University of Edinburgh
77	Automated electronic characterisation and analysis platform for memristive technology Guoyang Huang – University of Edinburgh
83	Oscillatory neural network using the collective electro-thermal dynamics of La0.67Sr0.33MnO3 Hitesh Chhabra – University of Groningen
87	The effects of oxygen engineering on hafnium and yttrium oxide-based RRAM for storage and memory applications Eszter Piros – Technische Universität Darmstadt
96	Resistive switching in sputter-deposited WO₃ Devices Abin Varghese – King's College London
97	Environmental-responsive resistive switching in PVP-embedded silver nanowire networks for unconventional computing Juan Ignacio Diaz Schneider – Instituto de Nanociencia y Nanotecnología (CNEA-CONICET)
98	Tunable multi-bit stochasticity in La0.67Sr0.33MnO3 based probabilistic bits Ishitro Bhaduri – University of Groningen
99	Deep embedded clustering for automated memristor electroforming classification Lai Gan – University of Edinburgh
100	Gradient descent-based training for stochastic memristive devices Kristina Nikiruy – Kiel University
102	An integrated framework for atomic-scale parameter extraction toward multiscale modeling of RRAM devices: aRPaCa and VacHopPy Jung-Hae Choi – Korea Institute of Science and Technology
105	2D MXene based composites for resistive switching devices Maria Grácio – Universidade do Porto
106	Quantum conductance and 6-bit storage in Ta₂O₅ memristors Prince Kumar – Indian Institute of Technology Hyderabad
107	Neuromorphic multiplexer based on cluster-assembled nanostructured material Silvia Bressan – Università degli Studi di Milano
109	Development of electronic system interface for neuromorphic arrays in in-sensor computing Mohammad Dehghan – Slovak Academy of Sciences
110	Wafer-scale memristors based on atomic layer deposited WS₂ Yuan Fa – AMO GmbH
114	VO₂-based memristor for neuromorphic computing Bingkai Ding – University of Southampton
115	Emulating biological synapses with nanoscale Co-Nb:STO interface memristors operating at low power Himanshu Rai – University of Groningen
120	Croconaine-based memristor devices for neuromorphic computing Anna Williamson – Swansea University
129	Filamentary TaOₓ digital memristors made by Ta oxidation for fuzzy-logic applications Natalia Kamila Calvo – Slovak Academy of Sciences
130	VO₂ oscillator circuits optimized for ultrafast, 100 MHz-range operation Tímea Nóra Török – Budapest University of Technology and Economics
132	In-sensor computing thermometer using analog memristor crossbar array Boris Hudec – Slovak Academy of Sciences
134	Reconfigurable perovskite-ferroelectric hybrid devices for in-sensor computing Xuechao Xing – Nanyang Technological University
175	Organic polymeric materials for CBRAM based memristors Emanuele Verrelli – University of Hull

• Live Demos

1	Hardware-software framework for RRAM-based classification using ArC TWO instrumentation board Cristian Sestito – University of Edinburgh
2	Adaptive auditory spike encoder using volatile memristors Dongxu Guo – University of Edinburgh
3	Hardware platform for memristor-CMOS neuromorphic integration Davide Florini – Université de Sherbrooke
4	EMOS: The unified AI hub for electronic materials Atish Dixit – University of Edinburgh

Day 3 – Wednesday 15th October

08:30 – 09:40	PLENARY LECTURE: Fusion of electronics and solid-state ionics through ionic nanoarchitectonics Kazuya Terabe – National Institute for Materials Science (Japan) Pentland Suite
09:40 – 09:55	Break
	Neuromorphic Computing III Sidlaw Suite	Materials III Fintry Suite
09:55 – 10:20	Reconfigurable compute-in-memory chips and systems based on memristors Yuchao Yang – Peking University	Advanced time series data processing using various memristor-integrated devices Cheol Seong Hwang – Seoul National University
10:20 – 10:35	Hardware-Software co-design of attention-driven dynamic convolutional neural networks with gate-tuneable 2D memristors Heemyoung Hong – Korea Advanced Institute of Science and Technology	Area-dependent resistive switching and interfacial dynamics in GCMO-based memristors Petriina Paturi – University of Turku
10:35 – 10:50	Self-organized criticality influence on information processing in memristive nanowire networks Fabio Michieletti – Politecnico di Torino	Bidirectional non-linear analog memristor based on band-to-band tunneling in metal-oxides heterojunction for sneak-path current free crossbar array architecture Peter Hayoung Chung – Ulsan National Institute of Science and Technology (UNIST)
10:50 – 11:05	Nanoporous niobium oxide memristors as physical platform for time series prediction via reservoir computing Joshua Donald – Loughborough University	Optical memristor devices for neuromorphic computer vision Neil Kemp – University of Nottingham
11:05 – 11:20	Programmable connectivity and tunable synchronous resistive switching in self-assembled nanostructured devices Francesca Borghi – Università degli studi di Milano	Schottky to ohmic switching in GeTe-based ferroelectric memristor Maxime Culot – SPINTEC, CEA, CNRS, UGA, Grenoble
11:20 – 11:35	Bio-inspired neuromorphic computing with memristor-based sparse event-driven (MSE) architecture for adaptive edge vision Menglin Song – University of Cambridge	HfZrOₓ-ferroelectric multistate tuneable capacitor Deepika Yadav – University of Edinburgh
11:35 – 11:50	Break
	Computing Architectures III Sidlaw Suite	Systems II Fintry Suite
11:50 – 12:15	Memristive devices and systems for novel applications Qiangfei Xia – University of Massachusetts, Amherst	Self-organizing nanowire networks: from local spatiotemporal dynamics to in materia computing Carlo Ricciardi – Politecnico di Torino
12:15 – 12:30	Memristive fully analog iteration for energy-efficient matrix equation solving Yibai Xue – Huazhong University of Science and Technology	Enhancing Johnson-Nyquist noise for high-performance Mott memristor-based Oscillatory TRNG Gwangmin Kim – Forschungszentrum Jülich GmbH
12:30 – 12:45	In-memory object detection based on C-doped Ge₂Sb₂Te₅ PCM chip in 40 nm node Yuqi Li – Peking University	Running conventional automatic speech recognition on memristor hardware: A simulated approach Benedikt Hilmes – RWTH Aachen
12:45 – 13:00	A fast and compact threshold switch-based cellular non-linear network cell Ahmet Samil Demirkol – Technische Universität Dresden	Three-terminal memristor with tuneable volatility and SET voltage Kshipraprasadh Srikrishnaprabhu – ETH Zurich
13:00 – 13:15	Analog-input reconfigurable threshold logic gates for real time learning and classification Paolo Milani – Università degli studi di Milano	Reconfigurable artificial multipolar neuronal device realized by nanoporous VO₂ memristive array Gwanyeong Park – Korea University
13:15 – 14:05	Lunch Lomond Suite
14:05 – 15:20	Poster Session III Lomond Suite
	Computing Architectures IV Sidlaw Suite	Materials IV Fintry Suite
15:20 – 15:45	Brain-inspired perception – from devices to systems Wei Lu – University of Michigan	Diffusive valence change memory: nanoionic mechanisms and prospects for neuro-inspired computing Regina Dittmann – Forschungszentrum Jülich GmbH
15:45 – 16:00	Accurate color perception with low power perovskite-based memristors for fused reservoir computing applications Charalampos Tsioustas – National Technical University of Athens	Plasmon-enhanced spectroscopy of oxygen-vacancy dynamics in plasmonic cavities Martin Nicolussi – King's College London
16:00 – 16:15	Mesoporous silica-based memristor for neuromorphic computing Bohao Ding – University of Southampton	3D KMC-based Investigation of the effect of dopants on the reliability of VCM ReRAM Nils Kopperberg – RWTH Aachen
16:15 – 16:30	Neural information processing and time-series prediction with only two dynamical memristors Dániel Molnár – Budapest University of Technology and Economics	Towards atomistic understanding of digital and analog filamentary switching Lambert Alff – Technische Universität Darmstadt
16:30 – 16:45	Stochastic memory for security: TRNG using RRAM variability Ankit Bende – Forschungszentrum Jülich GmbH	Material-driven variability mitigation for reliable multi-level switching in 1T1R memristive devices Godwin Paul – Forschungszentrum Jülich GmbH
16:45 – 17:00	Multilevel memimpedance switching in SiOₓ-based nanodevices for energy-efficient complex-valued processing Dip Das – University College London	Non-volatile CsPbBr₃ resistive random access memory with Al₂O₃ buffer layer Saeed Goudarzi – RWTH Aachen
18:30 – 23:30	Gala Dinner The National Museum of Scotland, Chambers Street, EH1 1FJ

Poster Session III

4	Optical and thermal tracking of the insulator-to-metal transition within vanadium oxide-based memristors in operation Etienne Puyoo – INSA Lyon
9	Towards a GeTe based non-volatile programmable photonic crystal slab Raven Quinn – University of Nottingham
15	V₃O₅ a potential material for neuromorphic computing Sanjoy Nandi – Australian National University
23	Revealing the optical properties of a transparent memristor A A Ngurah Arymurti Santosa – University College London
35	Tuneable volatile and non-volatile resistive switching in lead-free Dion-Jacobson and Ruddlesden-Popper double perovskites Mubashir Ganaie – Indian Institute of Technology Jodhpur
36	Photo-responsive hybrid quantum dot memristors for multilevel switching in neuromorphic applications Craig Venables – University of Nottingham
37	Photonic memristors for neuromorphic vision computing Bingjie Dang – National University of Singapore
43	A multimodal humidity adaptive optical neuron based on a MoWS₂/VOₓ heterojunction for vision and respiratory functions Abdul Momin Syed – King Abdullah University of Science and Technology
126	Nonlinear dynamics of RLCM circuits incorporating epsilon-Phase Ga₂O₃ photomemristors Marina Sparvoli – Universidade Federal do ABC
131	Fabrication and characterization of 16x16 analog memristor 1R crossbar arrays Matej Horský – Slovak Academy of Sciences
137	An RRAM-CMOS cell for analogue RBFNN implementation at the Edge Georgios Papandroulidakis – University of Edinburgh
141	Cryogenic resistive switching for superconducting electronics Jordi Suñé – Universitat Autonoma de Barcelona
146	NbOX₂-based ferroelectric memristor arrays for bioinspired low-power visual computing Yue Gong – Nanyang Technological University
152	A low voltage RRAM-based crossbar array using MOS parasitic diodes Sachin Maheshwari – University of Edinburgh
153	Implementation of printed halide perovskite photomemristors in large area electronics for privacy-preserving monitoring Shibi Varku – Nanyang Technological University
154	AI-Driven inverse design of memristive skyrmion logic elements Santhosh Sivasubramani – University of Edinburgh
155	Linking fundamental circuit theory and experiments with memristors: Extracting information from Bode plots Rodrigo Picos – Universitat de les Illes Balears
158	A CMOS/RRAM integration strategy Andreas Tsiamis – University of Edinburgh
163	Metal oxynitrides for scalable heterogeneously integrated memristor arrays Spyros Stathopoulos – University of Edinburgh
164	Flexible silicon carbide memristors: A path toward neuromorphic wearable electronics Omesh Kapur – University of Southampton
170	Adaptive CBRAM synapse model for emerging biohybrid computing systems Georgios Kleitsiotis – Democritus University of Thrace
183	Field free spin-orbit torque driven spintronic synapse and stochastic neuron devices for neuromorphic computing Aijaz Lone – King Abdullah University of Science and Technology
184	Atomistic modelling of SiO₂/Ta interfaces Margherita Buraschi – University College London
185	Reversible and controllable filamentary to interfacial transition in memristors Cuo Wu – Technische Universität Dresden

Day 4 – Thursday 16th October

09:00 – 10:30	Tutorial workshops How to develop a useful resistive switching investigation Mario Lanza – Singapore National University – Singapore Sidlaw Suite Conduction mechanisms underpinning resistive switching in metal-oxide stacks Loukas Michalas – Democritus University of Thrace, Dpt of Electrical & Computer Engineering – Greece Fintry Suite
10:30 – 11:00	Break
11:00 – 11:45	Editors panel with invited guests from Springer Nature, IOP and Frontiers Coordinated by Ilia Valov – Forschungszentrum Jülich Pentland Suite
11:45 – 12:30	Industry panel Coordinated by Sunny Bains – University College London Pentland Suite
12:30 – 13:00	Conference presentation prizes and close Pentland suite